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PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
Description
The PTF 10136 is a 6-watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability

Typical Output Power & Efficiency vs. Input Power
10 Efficiency 70 56 42 Efficiency (%) X
*
Output Power (Watts)
8 6 4 2 Output Pow er 0 0.00 0.05 0.10
VDD = 28 V IDQ = 70 mA f = 960 MHz
28 14 0 0.15
A-1 234 569 935
101
36
Input Power (Watts)
Package 20244
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 28 V, POUT = 1 W, IDQ = 70 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 70 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
18 6.0 50 --
Typ
19 7.5 57 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10136
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
Min
65 -- 3.0 --
Typ
-- -- -- 0.3
Max
-- 1 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 39 0.22 -40 to +150 4.5
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency
75 22 Gain (dB) 20 60 18 16 Efficiency (%) 45 14 VDD = 28 V 12 30 IDQ = 70 mA 10 Output Pow er (W) 8 15 6 4 0 840 860 880 900 920 940 960 980 100 0
Broadband Test Fixture Performance
24 60 Efficiency (%) Gain (dB) 16
Output Power & Efficiency
20
50
Gain
Gain
VDD = 28 V IDQ = 70 mA POUT = 6 W
Return Loss (dB) 40 -8 30 -15 20 -23 1000
12
8 960
970
980
990
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency
e
Power Gain vs. Output Power
21
10
PTF 10136
Output Power vs. Supply Voltage
Output Power (Watts)
20
IDQ = 70 mA IDQ = 35 mA
8 6 4 2 0
Power Gain (dB)
19 18 17 16 15 14
IDQ = 20 mA
VDD = 28 V f = 960 MHz
IDQ = 70 mA f = 960 MHz
0.1
1.0
10.0
24
26
28
30
32
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
0
Capacitance vs. Supply Voltage
20 3.0
Cds and Cgs (pF)
-10
IMD (dBc)
-20 -30 -40 -50 -60 0 2 4 6
3rd Order 5th 7th
12 8 4 0 0
2.0
Cds Crss
10 20 30 40
1.5 1.0 0.5
8
10
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130
0.05 0.145 0.24 0.335 0.43 0.525
Voltage normalized to 1.0 V Series show current (A)
3
Crss (pF)
VDD = 28 V, IDQ = 70 mA f1 = 960.0 MHz, f2 = 960.1 MHz
16
Cgs
VGS = 0 V f = 1 MHz
2.5
PTF 10136
Impedance Data
VDD = 28 V, IDQ = 70 mA, P-1dB = 6 W
D
e
Z0 = 50 W
Z Load Z Source
G S
Frequency
MHz 840 860 880 900 920 940 960 980 1000 R
Z Source W
jX 7.2 7.1 7.1 6.9 6.8 5.7 5.5 5.1 4.9 R 8.9 9.2 9.7 9.6 1.6 1.4 1.4 1.3 1.2 1.2 1.3 1.4 1.7
Z Load W
jX 15.0 13.1 12.6 12.5 11.9 11.7 11.1 11.2 11.1
10.4 10.6 14.3 14.4 16.3
4
e
(VDS = 28 V, ID = 200 mA)
PTF 10136
Typical Scattering Parameters
f (MHz)
100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
S11 Mag
0.962 0.925 0.918 0.913 0.906 0.900 0.896 0.894 0.895 0.896 0.897 0.901 0.900 0.905 0.908 0.910 0.917 0.916 0.919 0.923 0.925 0.932 0.929 0.930 0.934 0.935 0.943 0.942 0.942 0.946 0.943 0.951 0.951 0.951 0.952 0.947 0.951 0.951 0.949 0.953 0.947 0.950 0.946
S21 Ang
-65.3 -78.2 -95.7 -109 -120 -128 -134 -140 -144 -148 -152 -155 -158 -160 -162 -165 -167 -169 -171 -172 -174 -176 -177 -179 180 178 177 176 174 173 171 170 169 167 166 165 163 162 161 160 159 157 156
S12 Ang
138 129 116 106 96.8 89.2 82.5 76.4 70.9 65.9 61.1 56.9 52.7 48.7 45.0 41.2 37.8 34.6 31.2 28.4 25.2 22.4 19.7 16.8 14.5 11.9 9.38 7.16 4.51 2.46 -0.02 -2.40 -4.21 -6.51 -8.48 -10.8 -13.0 -14.7 -16.8 -18.7 -20.8 -22.9 -24.2
S22 Ang
48.1 39.0 28.5 19.7 12.4 6.10 0.77 -3.81 -7.93 -11.6 -15.0 -17.5 -19.8 -21.4 -22.9 -24.2 -24.3 -24.3 -22.7 -20.5 -16.5 -10.7 -1.76 9.41 22.3 33.2 43.6 52.3 59.0 64.1 67.2 69.7 71.9 72.2 72.5 72.0 71.8 71.9 71.3 71.1 70.4 69.4 68.6
Mag
22.2 20.0 17.4 15.0 13.0 11.4 9.98 8.84 7.90 7.09 6.41 5.85 5.33 4.89 4.49 4.14 3.85 3.56 3.31 3.09 2.88 2.70 2.53 2.38 2.24 2.10 2.00 1.89 1.80 1.71 1.62 1.55 1.48 1.41 1.35 1.28 1.24 1.18 1.13 1.09 1.05 1.01 0.982
Mag
0.016 0.018 0.021 0.022 0.023 0.023 0.022 0.022 0.021 0.020 0.019 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.006 0.005 0.005 0.005 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.015 0.017 0.018 0.019 0.020 0.021 0.022
Mag
0.888 0.853 0.810 0.776 0.754 0.742 0.737 0.735 0.739 0.743 0.752 0.763 0.771 0.782 0.787 0.797 0.808 0.817 0.828 0.833 0.841 0.849 0.855 0.864 0.871 0.875 0.883 0.883 0.891 0.897 0.902 0.911 0.911 0.911 0.912 0.911 0.920 0.920 0.923 0.925 0.922 0.929 0.930
Ang
-31.8 -37.7 -46.7 -54.3 -61.2 -67.1 -72.9 -78.3 -83.4 -88.4 -93.2 -97.5 -102 -106 -110 -113 -117 -120 -123 -126 -129 -132 -135 -138 -140 -142 -145 -147 -149 -151 -153 -155 -157 -159 -161 -163 -165 -166 -168 -170 -171 -173 -175
5
PTF 10136
Test Circuit
e
Test Circit Schematic fo f=960 MHz DUT
l6
l1 l2, l3 l4 l5
PTF 10136 LDMOS Transistor 0.221 l 960 MHz Microstrip 8.9 W 0.020 l 960 MHz Microstrip 41.0 W 0.190 l 960 MHz Microstrip 14.1 W 0.024 l 960 MHz Microstrip 50 W 0.034 l 960 MHz MIcrostrip 50 W
C1, C2, C3, C6 C4 C5 C7 C8 J1, J2 L1 R1, R2, R3 Circuit Board
36 pF, Capacitor ATC 100 B 0.1F, 50 V, Capacitor Digi-Key P4525-ND 100 mF, 50 V, Capacitor, Digi-Key P5782-ND 0.7 mF ATC 100 B 5.1F ATC 100 B Connector, SMA, Female, Panel Mount N/A 4 Turns, 22 AWG, .085 Dia I.D. Magnet Wire N/A Resistor, 220ohm, 1/4W Digi-Key 2.2QBK .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper
C6
Placement Diagram (not to scale)
6
e
PTF 10136
ERICSSON
ERICSSON
10136 INPUT
10136 OUT PUT
Artwork ( not to scale )
Case Outline Specifications Package 20244
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1998, 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10136 Uen Rev. B 03-15-01
7

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